VISHAY · FETs & Power MOSFETs · MPN SIR692DP-T1-RE3
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| Gate Charge(Qg) | 19.8nC@10V |
|---|---|
| Drain to Source Voltage | 250V |
| Current - Continuous Drain(Id) | 24.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 66.6W |
| RDS(on) | 63mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 9.3pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.405nF |
N-Channel 250V 24.2A 66.6W Surface Mount PowerPAKSO-8