VISHAY SIR690DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR690DP-T1-RE3

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)23.8nC@10V
Current - Continuous Drain(Id)34.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation6.25W
Reverse Transfer Capacitance (Crss@Vds)31.9pF
Number1 N-channel
Input Capacitance(Ciss)1.935nF

Technical details

200V 34.4A 4V 6.25W 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS

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