VISHAY · FETs & Power MOSFETs · MPN SIR690DP-T1-GE3
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| Gate Charge(Qg) | 23.8nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 34.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 6.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 31.9pF |
| RDS(on) | 35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.935nF |
N-Channel 200V 34.4A 6.25W Surface Mount PowerPAKSO-8