VISHAY · FETs & Power MOSFETs · MPN SIR688DP-T1-GE3
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| Gate Charge(Qg) | 20.5nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 29.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Pd - Power Dissipation | 5.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 95pF |
| RDS(on) | 3.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.105nF |
60V 29.2A 1.3V 5.4W 3.5mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS