VISHAY · FETs & Power MOSFETs · MPN SIR681DP-T1-RE3
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| Gate Charge(Qg) | 31.7nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.48nF |
| Current - Continuous Drain(Id) | 71.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 104W |
| RDS(on) | 16.7mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 47pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 4.85nF |
| Type | P-Channel |
P-Channel 80V 71.9A 104W Surface Mount PowerPAKSO-8