VISHAY SIR681DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR681DP-T1-RE3

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Specifications

Gate Charge(Qg)31.7nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1.48nF
Current - Continuous Drain(Id)71.9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation104W
RDS(on)16.7mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)47pF
Number1 P-Channel
Input Capacitance(Ciss)4.85nF
TypeP-Channel

Technical details

P-Channel 80V 71.9A 104W Surface Mount PowerPAKSO-8

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