VISHAY · FETs & Power MOSFETs · MPN SIR680DP-T1-RE3
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| Gate Charge(Qg) | 53.5nC@7.5V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.4V |
| Pd - Power Dissipation | 6.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 48pF |
| RDS(on) | 2.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.15nF |
80V 100A 3.4V 6.25W 2.9mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS