VISHAY · FETs & Power MOSFETs · MPN SIR670DP-T1-GE3
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| Gate Charge(Qg) | 18.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 56.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 42pF |
| RDS(on) | 7.8mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.815nF |
| Type | N-Channel |
60V 60A 2.8V 56.8W 7.8mΩ@4.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS