VISHAY SIR668DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR668DP-T1-RE3

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Specifications

Gate Charge(Qg)55nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)95A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.4V
Pd - Power Dissipation6.25W
RDS(on)4.8mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)72pF
Number1 N-channel
Input Capacitance(Ciss)5.4nF
TypeN-Channel

Technical details

N-Channel 100V 95A 6.25W Surface Mount PowerPAKSO-8

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