VISHAY · FETs & Power MOSFETs · MPN SIR668ADP-T1-RE3
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| Gate Charge(Qg) | 42nC@7.5V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 395pF |
| Current - Continuous Drain(Id) | 93.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 18pF |
| RDS(on) | 4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.75nF |
| Type | N-Channel |
100V 93.6A 4V 104W 4mΩ@10V 1 N-channel N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS