VISHAY · FETs & Power MOSFETs · MPN SIR664DP-T1-GE3
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| Gate Charge(Qg) | 26nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 720pF |
| Current - Continuous Drain(Id) | 60A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 32W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.75nF |
| Type | N-Channel |
60V 60A 2.5V 32W 6mΩ@10V 1 N-channel N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS