VISHAY · FETs & Power MOSFETs · MPN SIR662DP-T1-GE3
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| Gate Charge(Qg) | 27.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 3.27nF |
| Current - Continuous Drain(Id) | 35.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 6.25W |
| Reverse Transfer Capacitance (Crss@Vds) | 177pF |
| RDS(on) | 2.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.365nF |
| Type | N-Channel |
N-Channel 60V 35.8A 6.25W Surface Mount PowerPAK