VISHAY · FETs & Power MOSFETs · MPN SIR638DP-T1-RE3
No reviews yet — be the first to review VISHAY SIR638DP-T1-RE3.
| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 62.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.1V |
| Pd - Power Dissipation | 6.25W |
| RDS(on) | 0.88mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.5nF |
40V 62.8A 1.1V 6.25W 0.88mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS