VISHAY SIR638ADP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR638ADP-T1-RE3

No reviews yet — be the first to review VISHAY SIR638ADP-T1-RE3.

Specifications

Drain to Source Voltage40V
Gate Charge(Qg)53nC@10V
Output Capacitance(Coss)1.65nF
Current - Continuous Drain(Id)53A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.3V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)210pF
RDS(on)0.88mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)9.1nF
TypeN-Channel

Technical details

N-Channel 40V 53A 104W Surface Mount PowerPAK-SO-8

Related FETs & Power MOSFETs