VISHAY SIR632DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR632DP-T1-RE3

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)145pF
Current - Continuous Drain(Id)29A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation69.5W
RDS(on)34.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)8.5pF
Number1 N-channel
Input Capacitance(Ciss)740pF
Vgs±20V

Technical details

N-Channel 150V 29A Surface Mount PowerPAKSO-8

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