VISHAY SIR626LDP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR626LDP-T1-RE3

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Specifications

Gate Charge(Qg)41nC@4.5V
Drain to Source Voltage60V
Current - Continuous Drain(Id)186A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation6.25W
RDS(on)1.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)89pF
Number1 N-channel
Input Capacitance(Ciss)5.9nF

Technical details

N-Channel 60V 186A 6.25W Surface Mount PowerPAKSO-8

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