VISHAY SIR626ADP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR626ADP-T1-RE3

No reviews yet — be the first to review VISHAY SIR626ADP-T1-RE3.

Specifications

Gate Charge(Qg)83nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)165A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.5V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)3.4mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)3.77nF
TypeN-Channel

Technical details

N-Channel 60V 165A 125W Surface Mount PowerPAK-SO-8

Related FETs & Power MOSFETs