VISHAY · FETs & Power MOSFETs · MPN SIR624DP-T1-RE3
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 5.7A;18.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 5W;52W |
| Reverse Transfer Capacitance (Crss@Vds) | 8.3pF |
| RDS(on) | 60mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.11nF |
200V 2V 60mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS