VISHAY SIR622DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR622DP-T1-GE3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)41nC@10V
Current - Continuous Drain(Id)12.6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)20.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.516nF
TypeN-Channel

Technical details

N-Channel 150V 12.6A 104W Surface Mount PowerPAK-SO-8

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