VISHAY · FETs & Power MOSFETs · MPN SIR616DP-T1-GE3
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| Gate Charge(Qg) | 18.3nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 6.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 52W |
| RDS(on) | 50.5mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.45nF |
| Type | N-Channel |
N-Channel 200V 6.2A 52W Surface Mount PowerPAKSO-8