VISHAY · FETs & Power MOSFETs · MPN SIR610DP-T1-RE3
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 35.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 66.6W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 31.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.38nF |
200V 35.4A 4V 66.6W 31.9mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS