VISHAY · FETs & Power MOSFETs · MPN SIR608DP-T1-RE3
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| Drain to Source Voltage | 45V |
|---|---|
| Gate Charge(Qg) | 50.5nC@10V |
| Current - Continuous Drain(Id) | 208A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.3V |
| Pd - Power Dissipation | 66.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 120pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.9nF |
45V 208A 2.3V 66.6W 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS