VISHAY SIR606DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR606DP-T1-GE3

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Specifications

Gate Charge(Qg)24.3nC@7.5V
Drain to Source Voltage100V
Output Capacitance(Coss)450pF
Current - Continuous Drain(Id)37A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.6V
Pd - Power Dissipation44.5W
Reverse Transfer Capacitance (Crss@Vds)29pF
RDS(on)20mΩ@6V
Number1 N-channel
Input Capacitance(Ciss)1.36nF
TypeN-Channel

Technical details

N-Channel 100V 37A 44.5W Surface Mount PowerPAKSO-8

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