VISHAY · FETs & Power MOSFETs · MPN SIR606BDP-T1-RE3
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| Gate Charge(Qg) | 15.1nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 38.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 5W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 17.4mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.47nF |
N-Channel 100V 38.7A 5W Surface Mount PowerPAKSO-8