VISHAY · FETs & Power MOSFETs · MPN SIR586DP-T1-RE3
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| Gate Charge(Qg) | 29nC@7.5V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 78.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 45.7W |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.905nF |
80V 78.4A 4V 45.7W 5.8mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS