VISHAY · FETs & Power MOSFETs · MPN SIR582DP-T1-RE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 33.5nC@10V |
| Output Capacitance(Coss) | 1.02nF |
| Current - Continuous Drain(Id) | 116A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 92.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 9.5pF |
| RDS(on) | 3.9mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.36nF |
| Type | N-Channel |
80V 116A 4V 92.5W 3.9mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS