VISHAY · FETs & Power MOSFETs · MPN SIR5808DP-T1-RE3
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| Gate Charge(Qg) | 24nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 510pF |
| Current - Continuous Drain(Id) | 66.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 5.2W |
| RDS(on) | 7.35mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 8pF |
| Input Capacitance(Ciss) | 1.21nF |
| Type | N-Channel |
80V 66.8A 4V 5.2W 7.35mΩ@10V N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS