VISHAY · FETs & Power MOSFETs · MPN SIR5802DP-T1-RE3
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| Drain to Source Voltage | 80V |
|---|---|
| Gate Charge(Qg) | 60nC@10V |
| Current - Continuous Drain(Id) | 137.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF |
| RDS(on) | 4mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.02nF |
| Type | N-Channel |
80V 137.5A 4V 104W 4mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS