VISHAY SIR578DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR578DP-T1-RE3

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Specifications

Gate Charge(Qg)37nC@10V
Drain to Source Voltage150V
Current - Continuous Drain(Id)70.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)49pF
RDS(on)10mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)2.54nF
TypeN-Channel

Technical details

150V 70.2A 4V 45W 10mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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