VISHAY SIR574DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR574DP-T1-RE3

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Specifications

Drain to Source Voltage150V
Gate Charge(Qg)48nC@10V
Current - Continuous Drain(Id)48.1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation11.25W
Reverse Transfer Capacitance (Crss@Vds)31.5pF
RDS(on)14.3mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)2.3nF
TypeN-Channel

Technical details

N-Channel 150V 48.1A 11.25W Surface Mount PowerPAKSO-8

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