VISHAY SIR572DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR572DP-T1-RE3

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Specifications

Gate Charge(Qg)41nC@7.5V
Drain to Source Voltage150V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)59.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation59.2W
Reverse Transfer Capacitance (Crss@Vds)54pF
RDS(on)11.5mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)2.733nF
TypeN-Channel

Technical details

N-Channel 150V 59.7A 59.2W Surface Mount PowerPAKSO-8

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