VISHAY SIR570DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR570DP-T1-RE3

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Specifications

Gate Charge(Qg)71nC@10V
Drain to Source Voltage150V
Output Capacitance(Coss)330pF
Current - Continuous Drain(Id)77.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)6.5pF
RDS(on)8.5mΩ@7.5V
Number1 N-channel
Input Capacitance(Ciss)3.74nF
TypeN-Channel

Technical details

N-Channel 150V 77.4A 45W Surface Mount PowerPAK-SO-8

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