VISHAY SIR5623DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR5623DP-T1-RE3

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Specifications

Gate Charge(Qg)33nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)37A
Output Capacitance(Coss)800pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.6V
Pd - Power Dissipation59.5W
RDS(on)24mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)36pF
Number1 P-Channel
Input Capacitance(Ciss)1.575nF
TypeP-Channel

Technical details

P-Channel 60V 37A 59.5W Surface Mount PowerPAKSO-8

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