VISHAY · FETs & Power MOSFETs · MPN SIR5607DP-T1-RE3
No reviews yet — be the first to review VISHAY SIR5607DP-T1-RE3.
| Gate Charge(Qg) | 112nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 2.05nF |
| Current - Continuous Drain(Id) | 90.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.6V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 85pF |
| RDS(on) | 12mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5.02nF |
| Type | P-Channel |
P-Channel 60V 90.9A 104W Surface Mount PowerPAKSO-8