VISHAY · FETs & Power MOSFETs · MPN SIR514DP-T1-RE3
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 84.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| RDS(on) | 5.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.55nF |
100V 84.8A 4V 5.8mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS