VISHAY · FETs & Power MOSFETs · MPN SIR512DP-T1-RE3
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| Gate Charge(Qg) | 62nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 940pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 80W |
| Reverse Transfer Capacitance (Crss@Vds) | 11.5pF |
| RDS(on) | 5.1mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.4nF |
| Type | N-Channel |
N-Channel 100V 100A 80W Surface Mount PowerPAKSO-8