VISHAY · FETs & Power MOSFETs · MPN SIR5112DP-T1-RE3
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| Gate Charge(Qg) | 16nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 42.6A |
| Output Capacitance(Coss) | 310pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 56.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 7.3pF |
| RDS(on) | 14.9mΩ@10V |
| Input Capacitance(Ciss) | 790pF |
| Type | N-Channel |
N-Channel 100V 42.6A 56.8W Surface Mount PowerPAKSO-8