VISHAY · FETs & Power MOSFETs · MPN SIR5110DP-T1-RE3
No reviews yet — be the first to review VISHAY SIR5110DP-T1-RE3.
| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 47.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 59.5W |
| RDS(on) | 16mΩ@7.5V |
| Type | N-Channel |
100V 47.6A 4V 59.5W 16mΩ@7.5V N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS