VISHAY · FETs & Power MOSFETs · MPN SIR510DP-T1-RE3
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 126A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 101W |
| Reverse Transfer Capacitance (Crss@Vds) | 54pF |
| RDS(on) | 4.2mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.98nF |
| Type | N-Channel |
N-Channel 100V 126A 101W Surface Mount PowerPAKSO-8