VISHAY · FETs & Power MOSFETs · MPN SIR5108DP-T1-RE3
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 55.9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 65.7W |
| RDS(on) | 12.4mΩ@7.5V |
| Type | N-Channel |
100V 55.9A 4V 65.7W 12.4mΩ@7.5V N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS