VISHAY · FETs & Power MOSFETs · MPN SIR5102DP-T1-RE3
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| Gate Charge(Qg) | 25.1nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 66.6W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 5.6mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.85nF |
| Type | N-Channel |
100V 110A 4V 66.6W 5.6mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS