VISHAY SIR500DP-T1-RE3

VISHAY · FETs & Power MOSFETs · MPN SIR500DP-T1-RE3

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)82nC@10V
Current - Continuous Drain(Id)350.8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation66.6W
Reverse Transfer Capacitance (Crss@Vds)168pF
RDS(on)0.68mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)8.96nF
TypeN-Channel

Technical details

N-Channel 30V 350.8A 66.6W Surface Mount PowerPAKSO-8

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