VISHAY SIR474DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR474DP-T1-GE3

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Specifications

Gate Charge(Qg)27nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation3.9W;29.8W
Reverse Transfer Capacitance (Crss@Vds)76pF
RDS(on)9.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)985pF

Technical details

30V 20A 2.2V 9.5mΩ@10V 1 N-channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS

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