VISHAY SIR470DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR470DP-T1-GE3

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Specifications

Gate Charge(Qg)45.5nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)720pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)327pF
RDS(on)-
Number1 N-channel
Input Capacitance(Ciss)5.66nF
TypeN-Channel

Technical details

N-Channel 40V 60A 104W Surface Mount PowerPAKSO-8

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