VISHAY SIR466DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR466DP-T1-GE3

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Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation5W;54W
RDS(on)3.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.73nF

Technical details

N-Channel 30V 40A 5W 54W Surface Mount PowerPAK-SO-8

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