VISHAY SIR464DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR464DP-T1-GE3

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Specifications

Gate Charge(Qg)26.5nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation44.4W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)3.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.545nF

Technical details

N-Channel 30V 30A 44.4W Surface Mount PowerPAKSO-8

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