VISHAY SIR462DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR462DP-T1-GE3

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Specifications

Gate Charge(Qg)8.8nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)260pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation4.8W
Reverse Transfer Capacitance (Crss@Vds)95pF
RDS(on)7.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.155nF
TypeN-Channel

Technical details

N-Channel 30V 30A 4.8W Surface Mount PowerPAK-SO-8

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