VISHAY SIR460DP-T1-GE3

VISHAY · FETs & Power MOSFETs · MPN SIR460DP-T1-GE3

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Specifications

Gate Charge(Qg)16.8nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)24.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)168pF
RDS(on)4.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.071nF

Technical details

N-Channel 30V 24.3A Surface Mount PowerPAK-SO-8

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