VISHAY · FETs & Power MOSFETs · MPN SIR4608LDP-T1-GE3
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| Gate Charge(Qg) | 11nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 198pF |
| Current - Continuous Drain(Id) | 43.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 23pF |
| RDS(on) | 11.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 905pF |
| Type | N-Channel |
60V 43.4A 3V 3.6W 11.5mΩ@10V 1 N-channel N-Channel PowerPAKSO-8 Single FETs, MOSFETs RoHS