VISHAY · FETs & Power MOSFETs · MPN SIR4608DP-T1-GE3
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| Gate Charge(Qg) | 8.9nC@7.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 42.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 3.6W |
| RDS(on) | 11.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 740pF |
60V 42.8A 4V 3.6W 11.8mΩ@10V 1 N-channel PowerPAKSO-8 Single FETs, MOSFETs RoHS