VISHAY · FETs & Power MOSFETs · MPN SIR4606DP-T1-GE3
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 6.9nC@10V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 20W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 22.5mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 540pF |
| Type | N-Channel |
60V 16A 4V 20W 22.5mΩ@7.5V 1 N-channel N-Channel PowerPAK-SO-8 Single FETs, MOSFETs RoHS